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| 2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm Output power: Po 28.0dBmW Gain: Gp 8.0dB Drain Efficiency: D 50% * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 5 0.5 3 150 -45~150 Unit V V A W C C Note 1: Tc = 25C JEDEC JEITA TOSHIBA SC-62 2-5K1D Marking UW Electrical Characteristics (Ta = 25C) Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO D Gp Vth IDSS IGSS (Note 2) 3/4 Test Condition VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL == 50 VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 6.5 V, f = 470 MHz, Pi = 20dBmW, Po = 28.0dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 28.0 50 8.0 0.20 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 3/4 3/4 1.20 10 5 Unit dBmW % dB V A A 3/4 Load mismatch No degradation Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is used 1 2002-01-09 2SK3078A PF Output Power Test Fixture Line: 2 mm L1: f0.6, 5.5ID, 5T L2: f0.6, 5.5ID, 7T 2 56 W 2200 pF 7 2200 pF 20 2200 pF 29 5 9 5 1 33 7 L1 L2 29 3 7 pF 10 pF 5 pF 10000 pF 5 pF 10000 pF 5 pF 6.8 kW VGS VDS 2 2002-01-09 2SK3078A Pi - Po, Gp, Eff 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 Po (dBmW) Gp (dB) Eff (%) 20 f = 470 MHz Iidle = 50 mA Vdd = 4.5 V 90.0 80.0 70.0 13 15 Iidle - Gp, Eff f = 470 MHz Pi = 20dBmW Vdd = 4.5 V 80.0 76.0 (dBmW) (dBmW) 60.0 50.0 40.0 30.0 20.0 10.0 0.0 25 Gp Po 9 68.0 7 Gp Idd 5 0 50 64.0 60.0 100 Pi (dBmW) Iidle (mA) Pi - Po 30 28 26 24 f = 470 MHz Vdd = 4.5 V 300 280 260 240 f = 470 MHz Vdd = 4.5 V Pi - Idd (mA) 220 200 180 160 140 120 100 80 60 40 20 0 0 Iidle = 30 mA Iidle = 50 mA Iidle = 70 mA 10 20 30 (dBmW) 22 20 18 16 14 12 10 0 10 20 Iidle = 30 mA Iidle = 50 mA Iidle = 70 mA 30 Pi (dBmW) Drain current Po Pi (dBmW) Vdd - Gp, Eff 20 18 16 14 f = 470 MHz Iidle = 50 mA Pi = 20dBmW 100 95 90 85 34 32 30 28 f = 470 MHz Iidle = 50 mA Pi - Po (dBmW) Gp (dB) (%) 12 10 8 6 4 2 0 0 2 4 6 Gp Eff 80 75 70 65 60 55 50 8 26 24 22 20 18 16 14 12 0 0 20 Vdd = 2.4 V Vdd = 3.6 V Vdd = 4.5 V Vdd = 6.0 V 30 Eff Vdd (V) Po Pi (dBmW) 3 2002-01-09 Eff (%) 11 72.0 2SK3078A Pi - Idd 400 350 300 f = 470 MHz Iidle = 50 mA Idd (mA) 250 200 150 100 50 0 0 Vdd = 2.4 V Vdd = 3.6 V Vdd = 4.5 V Vdd = 6.0 V 10 20 30 Pi (dBmW) Caution: These are typical curves and devices are not necessarily guaranteed at these curves. 4 2002-01-09 2SK3078A RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-01-09 |
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